发明名称 METHOD OF FORMING INSULATION FILM, ELECTRONIC DEVICE, SUBSTRATE THEREFOR AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of forming an insulation film by which an insulation film having a low dielectric constant and a high mechanical strength can be easily manufactured at a low cost; and to provide a substrate for an electronic device which includes the insulation film formed by the method, an electronic device including the substrate for an electronic device, and an electronic apparatus. SOLUTION: A multilayer wiring board 1 includes a substrate 2, first wiring pattern 3 formed on the substrate 2, first insulation film 4 so formed as to cover the first wiring pattern 3, second wiring pattern 5 formed on the first insulation film 4, and second insulation film 6 so formed as to cover the second wiring pattern 5. The insulation films 4 and 6 are obtained by the insulation film formation method comprising a first process wherein silicone oil is gasified, and a second process wherein a polymer obtained by plasma polymerization of the gasified silicone oil is deposited to form the insulation film mainly formed of the polymer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190915(A) 申请公布日期 2006.07.20
申请号 JP20050003205 申请日期 2005.01.07
申请人 SEIKO EPSON CORP 发明人 NISHIJIMA TATSUMI
分类号 H01L21/312;C23C14/12 主分类号 H01L21/312
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