| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS (Complementary Metal-Oxide Semiconductor) solid-state imaging device capable of suppressing the degradation of sensitivity or quality of image by inhibiting the potassium element contained in the remaining slurry by performing CMP (Chemical Mechanical Polishing) from diffusing into a silicon substrate, and to provide a manufacturing method of a CMOS solid-state imaging device and the like. SOLUTION: A CMOS solid-state imaging device 100 is provided with an n-type silicon substrate 1 wherein there are formed an imaging part having a light receiving part 7 arranged in a shape of a matrix, and a transfer part for transfering an electric charge from each light receiving part provided for every vertical row of the light receiving part; and a first wiring insulating film 11 formed on the n-type silicon substrate wherein a potassium element remains by CMP processing on the surface. In the CMOS solid-state imaging device, a first diffusion prevention film 30 is formed between the n-type silicon substrate 1 and the first wiring insulating film 11. COPYRIGHT: (C)2006,JPO&NCIPI
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