| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for forming a junction electrode capable of forming the electrode having a small contact resistance and a high bond strength to a thermoelectric material. SOLUTION: In the method for forming the junction electrode in a porous thermionic element, a plurality of holes 11 are bored to an inorganic material body (a glass body) 10, and a Ti film 21 as a buffer layer is formed on the end face of the inorganic material body (the glass body) 10 closing arrays 13 by an ion plating method to the porous thermionic element 10 with the arrays 13 in which the thermoelectric materials (bismuth) 12 are arranged to the holes 11. In the method, a solder film 22 is formed by a PVD method without an opening to an atmospheric air, and an electrode film is formed as the junction electrode 20. COPYRIGHT: (C)2006,JPO&NCIPI
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