SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a ferroelectric capacitive element which has a compatibility with the design asset of a logic circuit formed by CMOS process and can be easily designed by the conventional manual design. SOLUTION: The semiconductor device is designed by the cell-base method using a ferroelectric capacitive standard cell 100 wherein an active element such as a transistor is not formed but the electric capacitive element is formed between power lines 120A and 120B having a predetermined width. COPYRIGHT: (C)2006,JPO&NCIPI