| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating an organic thin film transistor in which a source electrode and a drain electrode are formed easily on an organic semiconductor layer, and to provide an organic thin film transistor. SOLUTION: The organic thin film transistor comprises a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode formed sequentially on a support wherein an insulating ablation layer defining the channel length is provided on the organic semiconductor layer, and the source electrode and the drain electrode are divided on the ablation layer. COPYRIGHT: (C)2006,JPO&NCIPI
|
