| 发明名称 |
Transistor antifuse device |
| 摘要 |
In one embodiment, a method provides a bipolar junction transistor that is coupled to a first power supply. A second power supply is utilized to turn on the bipolar junction transistor. And, the bipolar junction transistor is overdriven.
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| 申请公布号 |
US2006160318(A1) |
申请公布日期 |
2006.07.20 |
| 申请号 |
US20050039157 |
申请日期 |
2005.01.19 |
| 申请人 |
SCHULTE DONALD W;MCMAHON TERRY;HALL DAVID D |
发明人 |
SCHULTE DONALD W.;MCMAHON TERRY;HALL DAVID D. |
| 分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
| 代理机构 |
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