| 摘要 |
In a mura-defect inspection method which inspects a mura-defect generated in a repeated pattern of a photomask 50 having a repeated pattern that a large number of unit patterns are regularly arranged, an area having a repeated pattern to be a target for a mura-defect inspection is specified as an inspection area from an overall image of a photomask taken by an image pickup camera 21 of a pattern information acquiring unit 20, pattern information about the repeated pattern is acquired from the image of the repeated pattern in the inspection area taken by a microscope 22, an inspection condition for the mura-defect inspection by a mura-defect inspection apparatus 10 is decided based on the pattern information, and the mura-defect inspection apparatus conducts the mura-defect inspection based on the inspection condition.
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