| 摘要 |
A semiconductor device having a vertical gate and method of manufacturing the same are disclosed. An example semiconductor device includes a pair of first source/drain regions formed apart from each other by a predetermined distance on a silicon substrate, a first silicon epitaxial layer formed on the pair of first source/drain regions, a vertical gate insulation layer formed at both sidewalls of the first silicon epitaxial layer, and a second silicon epitaxial layers formed on the first silicon epitaxial layer and on the gate insulation layer. The example device includes a pair of second source/drain regions formed in the second silicon epitaxial layer formed on the first silicon epitaxial layer, at positions above the pair of first source/drain regions, and a plurality of vertical gates respectively connected to the second silicon epitaxial layer formed on the gate insulation layer and to the pair of second source/drain regions.
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