发明名称 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
摘要 |
A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors may be provided using different doses or different material implants resulting in devices having different optimum unity current gain cutoff frequency (f<SUB>T</SUB>) and breakdown voltage (BV<SUB>CEO </SUB>and BV<SUB>CBO</SUB>) on a common wafer.
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申请公布号 |
US2006157824(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050299682 |
申请日期 |
2005.12.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUNN JAMES S.;LANZEROTTI LOUIS D.;VOLDMAN STEVEN H. |
分类号 |
H01L27/082;H01L21/8249;H01L27/06;H01L29/08 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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