| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an internal voltage generator for a semiconductor memory device which can prevent a latch-up phenomenon. <P>SOLUTION: This internal voltage generator includes: an internal voltage generation part composed of a level sensing part 20, a periodic signal generation part 22 and a charge pumping part 24 to generate an internal voltage VBB by charge-pumping a power supply voltage VSS according to the result of comparing an internal voltage VBB with a reference voltage VBB_EF; and an initial internal voltage generation part composed of an initial level sensing part 500 and an initial driver 40' to output the power supply voltage VSS as the internal voltage VBB according to the result of comparing the internal voltage VBB with the power supply voltage VSS. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
