SEMICONDUCTOR DEVICE HAVING MULTI-GATE INSULATING FILM AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a multi-gate insulating film which can prevent the mobility of carriers from reducing and is suitable as an element for a system on-chip, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a silicon substrate 31 in which a cell region for forming an NMOS and a peripheral circuit region for forming the NMOS and a PMOS are defined; a pure silicon oxide film 36B formed on the silicon substrate 31 of a cell region; an oxynitriding film 36A formed on the silicon substrate 31 of the peripheral circuit region; a first gate 100 and a second gate 200, in which an n+silicon electrode 37B, a low resistant metal electrode 40, and a gate hard mask 41 are laminated sequentially and respectively on the pure silicon oxide film 36B of the cell region, and the oxynitriding film 36A of an NMOS region of the peripheral circuit region; and a third gate 300 in which a p+silicon electrode 37A, a low resistant metal electrode 40, and the gate hard mask 41 are laminated sequentially on the oxynitriding film 36A of a PMOS region of the peripheral circuit region. COPYRIGHT: (C)2006,JPO&NCIPI