发明名称 REMOVER COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a remover composition, low in an environmental load and excellent in removing the residue of resist generated after ashing and metal oxide products coming from the metal wirings (aluminum, copper and titanium based oxide products, for example) and especially prominent for removing aluminum based oxide products while being excellent in anticorrosive property with respect to metal wirings (especially metal wirings containing aluminum) even under cleaning conditions at low temperatures within a short period of time. SOLUTION: The remover composition employed for cleaning a semiconductor substrate or a semiconductor element contains (1) 65 wt% or more of water and has (2) pH of more than 2 or more and 6 or less at 20°C, while containing (3) (I) at least one kind, selected from a group consisting of saccharide, an amino acid compound, an organic acid salt and an inorganic acid salt, and 0.01-1 wt.% of ammonium silicofluoride, or (II) an organic phosphonic acid and a compound containing fluorine. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191002(A) 申请公布日期 2006.07.20
申请号 JP20050352218 申请日期 2005.12.06
申请人 KAO CORP 发明人 TAMURA ATSUSHI
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
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