NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, MANUFACTURING METHOD THEREFOR, WRITING METHOD THEREFOR, READING METHOD THEREFOR, AND RECORDING MEDIUM AND SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To easily and surely adjust the amount of charge capture and prevent inconveniences, such as faulty information from occurring in storing desired multi-valued information.

SOLUTION: A semiconductor memory device is configured, with a charge capture film 5 being arranged, composed of the sequential lamination of a gate oxide film 11, silicon nitride film 12, silicon oxide film 13, silicon nitride film 14, silicon oxide film 15, silicon nitride film 16, and silicon oxide film 17, between a channel region C located between a source region 3 and drain region 4, and a gate electrode 6. Here, by accumulating charges in traps, existing between each nitride film 12, 14, 16 and its lower layer, and each of the oxide films 11, 13, 15, 17, information of four values ("00", "01", "10", "11") is stored.

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