| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND flash memory device and a method of programming the same. <P>SOLUTION: This NAND flash memory device includes a cell array connected to a plurality of bitlines, a page buffer for storing data to be programmed in the cell array, and a bitline setup circuit for successively setting up the plurality of bitlines with a specified unit in accordance with the data stored in the page buffer. In a bitline setup process at the programming operation and a process for loading the data stored in the page buffer to the bitline, all bitlines are not set up at the same time but successively set up with the specified unit. By this constitution, an influence of a coupling capacitance generated in the bitline setup process and the process for loading the data to the bitline is reduced, and a fail phenomenon of the program can be prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
