| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor capable of realizing a highly integrated circuit in preventing a decrease in light intensity to improve the light sensitivity by forming a light sensing element beneath a color filter, as well as by forming the light sensing element on a transistor after forming it, and to provide its manufacturing method. SOLUTION: The CMOS image sensor comprises a plurality of transistors formed on a semiconductor substrate, a metal wiring formed on the plurality of transistors to electrically connect the plurality of transistors, and a plurality of light sensing elements electrically connected to the transistors and formed on the metal wiring. COPYRIGHT: (C)2006,JPO&NCIPI
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