Halbleitervorrichtung und Verfahren zu deren Herstellung

摘要

A P-type well region (7) with a predetermined depth is formed on a N-type silicon carbide substrate (1). A schottky electrode (2) with schottky junction is formed on the substrate and electrically connected to a bonding wire (6) selectively above the well region. An Independent claim is also included for method of manufacturing semiconductor device.