| 摘要 |
A GaN buffer layer (12) and an Si-doped n-type GaN contact layer (13) are formed in this order on a sapphire substrate (11). An n-type Al0.3Ga0.7N cladding layer (14), an n-type Al0.25Ga0.75N optical guide layer (15), a multi-quantum well active layer (16), in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer (17), a p-type Al0.4Ga0.6N0.98P0.02 cladding layer (18) and a p-type GaN contact layer (19) are stacked in this order on an active region on the upper surface of the n-type contact layer. <IMAGE> |
