| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage apparatus in which it is suppressed that a resistance value of a valuable resistance element included in a memory cell is changed by a voltage pulse applied to the memory cell and defective read-out is caused at the time of read-out of a memory cell array. <P>SOLUTION: The apparatus is provided with a memory cell selecting circuit 17 selecting a memory cell out of a memory cell array 15, a read-out voltage applying circuit 22a applying read-out voltage to the variable resistance element of a selected memory cell, and a read-out circuit 23a detecting magnitude of a read-out current flowing in accordance with a resistance value of the variable resistance element of the memory cell to be read in the selected memory cell and performing read-out operation of information stored in the memory cell to be read out, the read-out voltage applying circuit 22a is constituted so that polarity of applied read-out voltage can be changed, the read-out circuit 23a performs read-out operation in accordance with a current direction of the read-out current in accordance with the polarity of read-out voltage applied to the variable resistance element to be read out. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
