| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electric power semiconductor device whose radiation efficiency and reliability are high, and whose manufacture cost can be reduced by radiating heat by using a lead connected to an electrode on the surface of a semiconductor element. <P>SOLUTION: The electric power semiconductor device is provided with the semiconductor element having a semiconductor substrate having a surface and a rear face, a first electrode installed on the surface, a second electrode installed on the rear face, and a control electrode which is arranged on the surface and controls current between the first electrode and the second electrode; the lead connected to the first electrode of the semiconductor element; a heat sink fixed to the rear face of the semiconductor element; and an insulating cabinet where at least the semiconductor element and the lead are embedded. The lead is connected to the first electrode in at least two connections and the lead projects to approach the surface of the insulating cabinet between the connections. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
