| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which comprises an ohmic electrode having a high impurity activation rate and high electron mobility and having small contact resistance and small parasitic resistance in a contact layer. SOLUTION: The semiconductor device comprises an active layer 13 formed on a substrate 11, a superlattice layer 14 formed on the active layer 13, and an ohmic electrode 15 formed on the superlattice layer 14. The superlattice layer 14 is formed by alternately laminating a first thin film and a second thin film made of a semiconductor having a polarization characteristic different from the first thin film and larger in band gap than the first thin film. An interface region as a contact between the upper surface of the first thin film and the lower surface of the second thin film or an interface region as a contact between the lower surface of the first thin film and the upper surface of the second thin film is doped with impurities. COPYRIGHT: (C)2006,JPO&NCIPI |
