| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a bonding interface between Si having characteristics equal to that attained by hydrophobic bonding by removing an ultra thin interface oxide remaining after hydrophobic wafer bonding between Si. SOLUTION: The interface oxide layer in the order of about 2-3 nm is dissolved and removed by, for example, high temperature annealing at 1,300-1,330°C only for 1-5 hours. The invention is most effectively used if the Si surface of a bonding interface has a different surface orientation as, for example, the Si surface with (100) orientation is bonded to the Si surface with (110) orientation. In more generous modes of this invention, an undesired material arranged on the bonding interface of two silicon-contained semiconductor materials can be removed by a similar annealing process. The surface crystal orientation, fine structure (single crystal, polycrystal, or amorphous), and elements of two silicon-contained semiconductor materials may or may not be identical. COPYRIGHT: (C)2006,JPO&NCIPI
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