发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To shorten an film forming time and enable the efficient utilization of a material gas by solving the insufficient supply of the material gas to the center of a substrate. SOLUTION: A first material gas A and a second material gas B are alternately supplied to a processing chamber housing a substrate without allowing the mixture of the gases A and B, thereby forming a desired thin film on the substrate. In supplying one of the first and second material gases to the processing chamber, the gas is supplied while making pressure in the processing chamber vertically fluctuate. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190788(A) 申请公布日期 2006.07.20
申请号 JP20050000980 申请日期 2005.01.05
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SATO TAKETOSHI;SAKAI MASANORI;YAMAZAKI HIROHISA;YOKOGAWA TAKASHI
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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