Method of fabricating semiconductor device including removing impurities from silicon nitride layer

摘要

A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH₃) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.