| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of reducing a leakage current in a storage electrode junction region by forming a gate having a stepped channel, by etching into a predetermined thickness a semiconductor substrate in a portion scheduled for a storage electrode contact and in an adjacent region thereof before the formation of an element isolation film that defines an active region. <P>SOLUTION: The manufacturing method comprises a stage of etching the semiconductor substrate 110, a stage of forming a lower pad oxide film, a lower pad nitride film, an upper pad oxide film, and an upper pad nitride film; a stage of forming a trench; a stage of forming the element isolation film 150; a stage of removing the nitride film and the oxide film; and a stage of depositing and patterning a gate oxide film 160, a gate polysilicon layer 170, a gate silicide layer 180, and a hard mask nitride film 190 to form a gate structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
