| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode structure applicable to a phase change memory for decreasing an operating power and an operating current, and decreasing a contact area between an electrode and a phase change layer. <P>SOLUTION: A phase change memory comprises a phase change layer, a first electrode, and a porous dielectric layer formed to have a plurality of pores. The porous dielectric layer is formed between the phase change memory and the first electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
