| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an advanced 3T1D memory cell having a readout selection switch and a readout switch. <P>SOLUTION: The memory cell has (1) a writing switch 1325 for which a 1st terminal is coupled with a bit line and a control terminal is combined with a 1st control line, (2) a 2-terminal semiconductor device 1330 for which a 1st terminal of the 2-terminal semiconductor device is coupled with the 2nd terminal of the writing switch, a 2nd terminal is coupled with at least one of a 2nd control line, and the capacitance when the voltage of the 1st terminal against the 2nd terminal is exceeding the threshold voltage becomes larger than the capacitance not exceeding the threshold voltage, (3) a readout selection switch 1340 for which the control terminal is coupled with the 2nd control line, and the 1st terminal is coupled with the bit line, and (4) a readout switch 1345 for which the control terminal is coupled with a 1st terminal of the gate control diode and the 2nd terminal of the writing switch, the 1st terminal is coupled with the 2nd terminal of the readout selection gate, and further the 2nd terminal is grounded. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
