发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of preventing the availability of the memory from lowering and improving the reliability of storage information. <P>SOLUTION: A memory cell area MCA in the nonvolatile memory 10 is divided into two areas of 1st and 2nd memory cell areas MCA1 and MCA2 to provide a separately controllable mode and a simultaneously controllable mode so that contents of two blocks equal or different in the block number of a memory cell can be simultaneously updated. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190370(A) 申请公布日期 2006.07.20
申请号 JP20050000469 申请日期 2005.01.05
申请人 RENESAS TECHNOLOGY CORP 发明人 ONISHI TADASHI;KAWAJIRI YOSHIKI;OZAWA SHINICHI
分类号 G11C16/02;G11C16/06;G11C29/42 主分类号 G11C16/02
代理机构 代理人
主权项
地址