| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor, whose electrical signal performance in low illuminance environment, has been eliminated of an etching process, for forming an STI insulating film, at least in the image region and as a result of the elimination. SOLUTION: The CMOS image sensor requires forming the STI insulating film for the electrical segregation of a circuit region and field oxide film by a local oxidation process for the electrical segregation of an image region. In other words, the CMOS image sensor includes a first conductivity-type substrate including the image region and circuit region, the STI insulating film, formed on the first conductivity-type substrate for the electrical segregation of the circuit region, and the field oxide film, formed on the first conductivity-type substrate for the electrical segregation of the image region. COPYRIGHT: (C)2006,JPO&NCIPI
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