发明名称 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method capable of reducing the surface projection height (ridge) in the last region where the laser irradiation is repeated in SLS method; and to provide a manufacturing equipment, and a semiconductor device manufactured by them. SOLUTION: The semiconductor device has a semiconductor film formed on the substrate. This semiconductor film has a lateral growth crystal where the surface projection height is lower than the film thickness of the semiconductor film at the end. Furthermore, there are provided the manufacturing method of the semiconductor device and the manufacturing equipment. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190897(A) 申请公布日期 2006.07.20
申请号 JP20050002865 申请日期 2005.01.07
申请人 SHARP CORP 发明人 NAKAYAMA JUNICHIRO;KASHIWAGI IKUMI;INUI TETSUYA
分类号 H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/20
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