发明名称 |
SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of reducing the surface projection height (ridge) in the last region where the laser irradiation is repeated in SLS method; and to provide a manufacturing equipment, and a semiconductor device manufactured by them. SOLUTION: The semiconductor device has a semiconductor film formed on the substrate. This semiconductor film has a lateral growth crystal where the surface projection height is lower than the film thickness of the semiconductor film at the end. Furthermore, there are provided the manufacturing method of the semiconductor device and the manufacturing equipment. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006190897(A) |
申请公布日期 |
2006.07.20 |
申请号 |
JP20050002865 |
申请日期 |
2005.01.07 |
申请人 |
SHARP CORP |
发明人 |
NAKAYAMA JUNICHIRO;KASHIWAGI IKUMI;INUI TETSUYA |
分类号 |
H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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