| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon etching method by which an silicon object with an optional taper angle (≥80°, <90°) can be easily and stably manufactured, and to provide a silicon object which is completed by the method. SOLUTION: The pressure within a reactor 1 is reduced, and a process gas is introduced to a plasma generation chamber 2a through a gas introduction pipe 4. AC current is applied to a coil 3 to generate the plasma of the process gas within the plasma generation chamber 2a, and at the same time, AC current is applied to a substrate electrode 11 to draw the generated plasma into a reaction chamber 2b. The plasma is used to etch a silicon material of a specimen 20 placed on a platen 6. In the first step, etching is carried out while a mixed gas of SF<SB>6</SB>, C<SB>4</SB>F<SB>8</SB>and O<SB>2</SB>is being used as a process gas, and in the next second step, etching is carried out for a longer duration than the first step while a mixed gas of SF<SB>6</SB>and C<SB>4</SB>F<SB>8</SB>is being used as a process gas. COPYRIGHT: (C)2006,JPO&NCIPI
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