| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an effective channel length longer than that of a common planar transistor without using a recessed gate and to provide a manufacturing method thereof. SOLUTION: This semiconductor device comprises a silicon substrate 31 having a planar active region 201 and an active region consisting of a prominent active region 202B on the planar active region 201, a gate insulating film 39 formed on the active region, and a gate 400 located on the gate insulating film 39 and including a gate wiring films 40, 41 covering the prominent active region 202B. This semiconductor device has the effective channel length longer than that of a conventional planar transistor and is capable of preventing the occurrence of a leakage current and improving the manufacturing yield of the semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI |
