MINUTE SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method of easily manufacturing a minute semiconductor structure having excellent semiconductor characteristics. SOLUTION: The method of manufacturing a minute semiconductor structure composed of a single crystal semiconductor includes a process (a) of forming a laminate structure including a metal body 102 containing an element having the catalytic action of semiconductor growth and an insulating film 103 on a supporting body 101; a process (b) of causing the element to react with the insulating film by exposing the surface of the insulating film 103 in a gas atmosphere containing the element reacting with the insulating film 103 to remove a part of the insulating film, and forming an opening 105 exposing the surface of the metal body on the insulating film 103; and a process (c) of forming a minute structural body 110 composed of a single crystal semiconductor in the opening 105 by exposing the exposed metal surface in a gas atmosphere containing the element forming the single crystal semiconductor. COPYRIGHT: (C)2006,JPO&NCIPI