SYSTEM AND METHOD FOR CHARACTERIZING LITHOGRAPHY EFFECTS ON A WAFER

摘要

In the manufacture of semiconductors, it is often necessary to characterize the effect of line width and line width shape on yield. In an example embodiment, there is a method (200) for randomizing exposure conditions across a substrate. The method comprises generating a list of random numbers (210). A random number is mapped (220) to an exposure field, forming a list of random numbers and corresponding exposure fields. The list or random numbers and corresponding exposure fields is sorted (230) by random number. To each exposure field in the list sorted by random number, an exposure dose is assigned (240). The list is sorted is sorted by exposure field (250).