发明名称 Siloxanhaltige Harze und isolierender Film daraus für Halbleiter-Zwischenschicht
摘要 <p>A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.</p>
申请公布号 DE602004001097(D1) 申请公布日期 2006.07.20
申请号 DE20046001097T 申请日期 2004.06.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LYU, YI YEOL;RYU, JOON SUNG;SONG, KI YONG;SEON, JONG BAEK
分类号 C08G77/50;B32B17/02;B32B25/20;C08G77/04;C09D183/04;C09D183/14;H01B3/46;H01L21/00;H01L21/31;H01L21/312;H01L21/469;H01L21/768;H01L23/522 主分类号 C08G77/50
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