REFLECTIVE PHOTO MASK, BLANK THEREOF, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a reflective photo mask which has sufficiently low exposure reflectivity with respect not only to EUV light but also to DUV light during pattern inspection, and has a sufficient reflectivity contrast and therefore can perform extremely precise inspection and mask pattern transfer.

SOLUTION: On a substrate, a multilayer reflection film and a light absorption layer are stacked including a light absorption film containing at least indium.

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