| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide film formation technology and a method for manufacturing a semiconductor device, in which an oxide film can be formed at low temperatures in a short time. SOLUTION: An oxidant supply unit 30 comprises an ozonizer 31 for producing ozone 32, a bubbler 34, wherein deionized water 35 is kept and an ozone supplying pipe 33 for supplying ozone 32 from the ozonizer 31 is immersed in the deionized water 35 so as to form ozone bubbles, and a supply pipe 36 for supplying an oxidant 37 which contains OH* produced by the ozone bubbles 32 and is connected to a feed pipe 18 of an oxide film forming apparatus 10. Since the oxidant which contains OH* produced by the ozone bubbles in water has a strong oxidizing power, an oxide film can be formed over a wafer at relatively low temperatures in a short time. Since this can be conducted without the use of a plasma, a semiconductor device or a circuit pattern formed previously on the wafer can be avoided from being damaged by plasma. The oxide film forming apparatus can be improved in the throughput, performance and reliability. COPYRIGHT: (C)2006,JPO&NCIPI
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