发明名称 THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To reduce a contact fail in a thin-film transistor causing a point defect and a line defect although it is extremely difficult to eliminate the point and line defects completely in the thin-film transistor in an active matrix type liquid crystal display. SOLUTION: The thin-film transistor comprises a first contact hole reaching a source region 309 or a drain region provided in an interlayer insulating film 314; a second contact hole reaching a gate electrode 308 provided in the interlayer insulating film 314; and wiring formed in the first and second contact holes 321, 322 each. In the wiring, a first titanium film 401, aluminum or a film 402 with aluminum as a main component, and a second titanium film 404 are laminated, and aluminum or the film with aluminum as a main constituent has an element for giving fluidity to aluminum or the film with aluminum as a main constituent, thus reducing a contact fail. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191157(A) 申请公布日期 2006.07.20
申请号 JP20060104032 申请日期 2006.04.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L29/786;H01L21/3205;H01L21/768;H01L23/52 主分类号 H01L29/786
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