摘要 |
A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H<SUB>2</SUB>SO<SUB>4 </SUB>to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H<SUB>2</SUB>SO<SUB>4 </SUB>and H<SUB>2</SUB>O<SUB>2</SUB>, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.
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