| 摘要 |
There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H<SUB>2 </SUB>and N<SUB>2 </SUB>gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H<SUB>2 </SUB>flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.
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