| 摘要 |
A single-electron transistor device (100) comprises source (105) and drain (110) located over a substrate (115), and a quantum island (120) located between the source and drain, with tunnel junctions (125), (130) respectively between the quantum island and the source and drain. A fixed-gate electrode (135) is located adjacent the quantum island. The fixed-gate electrode has a capacitance that varies as a function of voltage applied to the fixed-gate electrode.
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