| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a conductive layer in the inside of the channel formed at an insulating film. <P>SOLUTION: An amorphous silicon film 26A is deposited inside a channel 25 formed at a silicon oxide film 24, and a photoresist film 30 is spin-coated at the upper part of the amorphous silicon film 26A. Then the entire surface of the photoresist film 30 is irradiated with light, so that the photoresist film 30 on the outside of the channel 25 is exposed. Here, a photoresist film 30 inside the channel 25 is not exposed, since there is lack of exposure amount. The photoresist film 30 is developed to remove a photoresist film 30, which is outside the channel 25 being an exposure part, and then a photoresist film 30 which is left inside the channel 25 and unexposed is used as a mask for dry-etching, to remove an amorphous silicon film 26A outside the channel 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
