| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a landing plug contact forming method of a semiconductor element capable of preventing a step between a poly-silicon film and a gate hard mask nitride film in a CMP process for forming a landing plug contact. <P>SOLUTION: In the landing plug contact forming method, an existing CMP process is not used for a poly-silicon recess for isolating the landing plug contact (LPC), but an etch-back process of two steps is used. Namely, in the first etch-back process, a seam of the poly-silicon film generated in a space (an upper part of a contact hole) between gate electrode patterns is removed by isotropic dry-etching (partial etching), and in the second etch-back process, a recipe in which an etching rate is similar between the poly-silicon film and a hard mask nitride film 35 is applied for performing anisotropic dry-etching. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
