发明名称 IMPRINT LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide an imprint lithography method in which resolution and superposition accuracy are improved. SOLUTION: The imprint lithography method comprises: a step for subjecting an imprintable medium on a substrate to a condition that the medium is at a first temperature which may subject the medium to a flowable state, where the imprintable medium comprises an imprint material selected from a group consisting of a crystalline material and a polycrystalline material; a step for pressing a template into the medium to form an imprint in the medium; a step for cooling the medium to a second temperature which may subject the medium to a substantially non-flowable state while the medium is brought into contact with the template 46; and a step for separating the medium from the template 46 in the substantially non-flowable state. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191085(A) 申请公布日期 2006.07.20
申请号 JP20050377244 申请日期 2005.12.28
申请人 ASML NETHERLANDS BV 发明人 KOLESNYCHENKO ALEKSEY YURIEVICH;LOOPSTRA ERIK ROELOF;VAN SANTEN HELMAR;KRUIJT-STEGEMAN YVONNE V
分类号 H01L21/027;B81C99/00 主分类号 H01L21/027
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