发明名称 CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a CMOS image sensor in which a light shielding film is formed so as to improve light reflection characteristics and so as to protect the microlenses during packaging, and to provide a method of fabricating the same. SOLUTION: The CMOS image sensor includes a semiconductor substrate; a plurality of photo sensing elements on the semiconductor substrate; a first insulating film on the substrate including the photo sensing elements; a plurality of metal wirings formed on the first insulating film; a second insulating film formed on the first insulating film including the metal wirings; the light shielding film formed on the second insulating film; and the microlenses on the second insulating film in the gaps of the patterned light shielding film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191023(A) 申请公布日期 2006.07.20
申请号 JP20050358615 申请日期 2005.12.13
申请人 DONGBUANAM SEMICONDUCTOR INC 发明人 LEE SANG GI
分类号 H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/14
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