发明名称 |
CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor in which a light shielding film is formed so as to improve light reflection characteristics and so as to protect the microlenses during packaging, and to provide a method of fabricating the same. SOLUTION: The CMOS image sensor includes a semiconductor substrate; a plurality of photo sensing elements on the semiconductor substrate; a first insulating film on the substrate including the photo sensing elements; a plurality of metal wirings formed on the first insulating film; a second insulating film formed on the first insulating film including the metal wirings; the light shielding film formed on the second insulating film; and the microlenses on the second insulating film in the gaps of the patterned light shielding film. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006191023(A) |
申请公布日期 |
2006.07.20 |
申请号 |
JP20050358615 |
申请日期 |
2005.12.13 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC |
发明人 |
LEE SANG GI |
分类号 |
H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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