| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize damage applied to a lower film in an etching process defining metal wiring. SOLUTION: This method contains steps of forming a first interlayer insulating film, a second interlayer insulating film, a second etching stop film, a buffer oxide film, and a first conductive film for a hard mask sequentially; forming a contact hole for exposing a first etching stop film; removing the first etching stop film; forming the same conductive film as the first conductive film for the hard mask to form a contact plug by levelling; forming a third interlayer insulating film, a second conductive film for the hard mask, and an anti-reflection film sequentially; patterning the anti-reflection film; using the anti-reflection film to pattern the hard mask; etching until the second etching stop film is exposed to form a trench; and forming the same conductive film as the second conductive film for the hard mask to form metal wiring by levelling. COPYRIGHT: (C)2006,JPO&NCIPI
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