| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin-film transistor avoiding a dimensional change by applying a heat and having stable characteristics by a simple process, as a productive efficiency is left as it is held during a process in which a gate electrode and source-drain electrodes are formed. SOLUTION: In the manufacturing method for the thin-film transistor, the gate electrode is formed on either surface of a film as a gate insulating film and the source-drain electrodes 30 on a surface different from the surface by the printing of a solution or a dispersion in which a conductive material is dissolved by an organic solvent. The manufacturing method has a process in which the pattern shape of either one electrode is printed on one surface of the film by the solution or the dispersion; and the process in which the solution or the dispersion in the pattern shape of the previously printed electrode is dried under a vacuum, the organic solvent is volatilized, and the electrode is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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