| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum well structure formed of high-quality crystals, and to provide its manufacturing method. SOLUTION: A multiple quantum well 10 is formed on an InP substrate 1, and it is made by stacking a barrier layer 4 and a well layer 5 with a different grating constant. The well layer 5 is formed at a growth speed of 0.4 nm/sec or more, so that three-dimension growth is suppressed, and the well layer 5 is made to have a compression deformation of 1.5% or more to the grating constant of the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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