| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of improving the surface morphology of a ferroelectric film formed through an organic metal vapor phase epitaxy method. SOLUTION: A buried layer 34 is formed through a process of applying material of low viscosity on the ferroelectric film 32 formed through an MOCVD method, then the whole surface of the buried layer 34 is subjected to anisotropic etching to remove projection tops on the surface of the ferroelectric film 32, and then the buried layer 34 left on the surface of the ferroelectric film 32 is removed. The surface morphology of the ferroelectric film 32 is improved and flattened. When the conductive film 36 or the ferroelectric film 32 is subjected to patterning through lithography, exposure incident light is never reflected in various directions, so that a desired pattern can be formed as designed. COPYRIGHT: (C)2006,JPO&NCIPI
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