发明名称 |
Metal junction diode and process |
摘要 |
A junction diode includes a substrate having first and second cathode regions separated by an anode region. Metal silicide layers contact the first and second cathode regions and the anode regions. The anode region has a doping concentration sufficient to create a depletion region in the anode region adjacent to the metal silicide layer contacting the anode region. A fabrication process includes forming the anode region to have a doping concentration that increases in a direction into the anode region away from the substrate surface.
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申请公布号 |
US2006157748(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050038998 |
申请日期 |
2005.01.20 |
申请人 |
CHONG NUI;OMID-ZOHOOR FARROKH |
发明人 |
CHONG NUI;OMID-ZOHOOR FARROKH |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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