| 摘要 |
A memory cell includes a memory cell section and a switching section. The memory cell section includes first and second inverters which are connected to form a flip-flop, and each of the first and second inverters comprises a load transistor and a drive transistor. The switching section is connected with a word line and configured to operatively disconnect the drive transistors of the first and second inverters from a power source when the word line is driven.
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